Ferroelectric materials such as hafnium zirconium oxide (HZO) are likely to form the basis of a next-generation memory technology.  For instance, replacing the conventional gate dielectric in a field-effect transistor (FET) with HZO can form a ferroelectric FET, or FeFET.  Chris Regan’s group at UCLA has been working with Suman Datta’s group at Georgia Tech . . .