Point Defect Induced Potential Wells across the m-Plane of Core/Shell GaN Nanowires
Lauren Mason
Semiconductor nanowires offer unique opportunities for next-generation electronic and photonic devices due to their high surface-to-volume ratio, ability to suppress dislocations, accommodate large lattice mismatches, and support both axial and radial heterostructure growth. In particular, the non-polar planes of GaN nanowires provide a promising platform for high-performance optoelectronics by mitigating quantum-confined Stark effects and reducing . . .