S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductor
Jun He
Nature Communications, Published online: 22 April 2026; doi:10.1038/s41467-026-71802-4 A room-temperature ferroelectricity with out-of-plane polarization is disclosed in chemical vapor deposition synthesized two-dimensional α-MnS, which exhibits large tunneling electroresistance, high endurance, and long retention time.