ferroelectrics

Nature Communications, Published online: 22 April 2026; doi:10.1038/s41467-026-71802-4 A room-temperature ferroelectricity with out-of-plane polarization is disclosed in chemical vapor deposition synthesized two-dimensional α-MnS, which exhibits large tunneling electroresistance, high endurance, and long retention time.

Nature Communications, Published online: 14 April 2026; doi:10.1038/s41467-026-71823-z Cylindrical ferroelectric/dielectric capacitors show tunable capacitance, shifting from positive to infinite or negative by varying layer thickness. Models and simulations reveal curvature boosts capacitance via stray-field energy effects.

At the ultimate scaling limit, electronic memory would store bits of information by shifting atoms back and forth inside individual crystalline unit cells. Ferroelectric materials exhibit the electronic hysteresis required to realize this ideal. However, despite the perfect alignment between a material class and an economically important application, ferroelectric computer memory has almost zero …

Antiferroelectric materials have electrical properties that make them advantageous for use in high-density energy storage applications. Researchers have now discovered a size threshold beyond which antiferroelectrics lose those properties, becoming ferroelectric. The post Make Them Thin Enough, and Antiferroelectric Materials Become Ferroelectric appeared first on Semiconductor Digest .

We are delighted to share with you our latest collection of recently published articles focusing on Ferroelectric and Multiferroic Materials, handpicked by Associate Editor Donna Arnold. Ferroelectric and multiferroic materials continue to attract extensive attention within the literature due to the potential of these materials to have an increased impact in our everyday lives. Research […]

The existence and impact of persistent ferroelectric domains in MAPbI3 Lauren M. Garten1,*, David T. Moore1, Sanjini U. Nanayakkara1, Shyam Dwaraknath2, Philip Schulz1,3, Jake Wands4, Angus Rockett4, Brian Newell5, Kristin A. Persson2,6, Susan Trolier-McKinstry7 and David S. Ginley1,* Science Advances 25 Jan 2019: Vol. 5, no. 1, eaas9311 DOI: 10.1126/sciadv.aas9311 Abstract Methylammonium lead io…

The existence and impact of persistent ferroelectric domains in MAPbI3 Click for link Lauren M. Garten1,*, David T. Moore1, Sanjini U. Nanayakkara1, Shyam Dwaraknath2, Philip Schulz1,3, Jake Wands4, Angus Rockett4, Brian Newell5, Kristin A. Persson2,6, Susan Trolier-McKinstry7 and David S. Ginley1,* 1National Renewable Energy Laboratory, Golden, CO 80401, USA. 2Lawrence Berkeley National Laborato…

Ferroelectrics have already found applications in non-volatile random access memory (RAM) and so far the Fujitsu company has made more than 1 billion FeRAM devices (if you open up a Playstation 2, for example, you’ll find one inside). One critical, yet often overlooked, problem with ferroelectrics is leakage in which the material has a measurable dc conductivity. Leakage is tolerated to a certain…