Optical memory using leaky ferroelectrics? - Advanced Science News
Tim Adams
Ferroelectrics have already found applications in non-volatile random access memory (RAM) and so far the Fujitsu company has made more than 1 billion FeRAM devices (if you open up a Playstation 2, for example, you’ll find one inside). One critical, yet often overlooked, problem with ferroelectrics is leakage in which the material has a measurable dc conductivity. Leakage is tolerated to a certain extent depending on the intended application and it can be limited by careful processing and...