Engineering Ultra-Thin Atomic Interface Buffer for 2D Molybdenum Disulfide Transistors

As transistors approach atomic dimensions, the interface between different materials grows in importance. Researchers from?National Yang Ming Chiao Tung University (NYCU), TSMC Corporate Research, and colleagues from National Taiwan University, Academia Sinica, and the National Center for Instrumentation Research have devised an interface engineering approach to address a major challenge in two-dimensional (2D) transistors.