Metal-insulator transition at low densities in a two-dimensional low-bandgap semiconductor

Nature Communications, Published online: 08 June 2026; doi:10.1038/s41467-026-74097-7 The behavior of metal-insulator transitions can be impacted by interaction and disorder mechanisms. Here, the authors identify metal-insulator transitions at carrier densities on the order of 1010 cm−2 in PtSe2 devices and evidence of a crossover in the metal-insulator transition behavior.