Nature Nanotechnology, Published online: 22 July 2026; doi:10.1038/s41565-026-02217-x Foundry-compatible transfer of two-dimensional materials is central to angstrom-era complementary FET logic, where atomically thin channels must be moved from growth wafers to target stacks without contamination, strain or interfacial damage. Scalable delamination, bonding and wafer-level metrology are needed to bridge lab-scale device performance with 300-mm CMOS manufacturing.