Monolithic integration of p- and n-type doped 2D WSe 2 for wafer-scale complementary logic circuits

Nature Communications, Published online: 25 May 2026; doi:10.1038/s41467-026-73144-7 The scarcity of effective doping strategies has so far limited the development of scalable complementary electronic circuits based on 2D semiconductors. Here, the authors report the fabrication of wafer-scale homogeneous top-gated complementary inverter arrays and logic circuits based on p-type and n-type doped 2D WSe2 semiconducting channels.