GaN Lattice Damage and GaN-HEMT Metrology by Cameraless T-Ray Imaging and Time-Domain Spectroscopy
Anis Rahman
Gallium nitride (GaN) film grown on a silicon substrate has been investigated for high electric field-induced lattice damage via cameraless terahertz (T-ray) imaging technique. In addition, T-ray time-domain spectroscopy (TDS) has been conducted on the same GaN film as a function of depth via nondestructive and noncontact pump-probe technique. This is termed as the deep-level TDS. Further, a pair of GaN high electron mobility transistor (HEMT) dies has been imaged at the channel area where the d