Nature Communications, Published online: 09 June 2026; doi:10.1038/s41467-026-74149-y The fabrication of p-type contacts for 2D semiconductors remains an important challenge towards the industrialization of 2D electronics. Here, the authors report a low-temperature molecular beam epitaxy contact strategy using a high-work-function Au1-xSex alloy to achieve Fermi-level depinning in monolayer WSe2 and realize high-performance 2D p-type transistors.