Researchers from University of Lübeck published a technical paper titled “SPARC: Automated Root-Cause Analysis of Pre-Silicon Power Side-Channel Leakage in the Processor Design Flow.” Abstract Excerpt: “This paper presents SPARC, an automated framework for pre-silicon PSCL evaluation and root-cause analysis. SPARC leverages macro-cell-level Information Flow Tracking (IFT) augmented with enhanced shadow logic that tags switching... » read more The post Pre-Silicon Power Side-Channel Leakage In Processors (University of Lübeck) appeared first on Semiconductor Engineering .