Non-volatile memories based on patterned metal–semiconductor heterostructures of niobium disulfide and molybdenum disulfide
Andras Kis
Nature Electronics, Published online: 19 May 2026; doi:10.1038/s41928-026-01634-z Patterned and scalable two-dimensional metal–semiconductor heterostructures formed between niobium disulfide and molybdenum disulfide can be created using an in situ sulfurization process and used to make field-effect transistors and non-volatile memory devices.