High-performance p-type monolayer tungsten diselenide transistors
Xiangshui Miao
Nature Electronics, Published online: 20 May 2026; doi:10.1038/s41928-026-01637-w Using an industry-compatible and tunable oxygen-incorporated technique to heal defect states, p-type monolayer tungsten diselenide transistors can be created with a hole mobility of 137 cm2 V−1 s−1 and a contact resistance of approximately 560 Ω µm at room temperature.