Mechanically Gated Vertical Ion Channels for Fast Strain‐Sensitive Neuromorphic Memristor

Integrating sensing functions into memristors is promising to realize in-sensor computing with unpreceded energy efficiency and minimized latency. Strain-sensitive memristors gradually draw attention in neuromorphic tactile sensing applications, but still face the sensitivity-response time tradeoff dilemma. Here, we demonstrate that antiphase boundaries (APBs) in thin-film structures function as mechanically gated vertical ion channels in a strain-sensitive neuromorphic memristor, which can achi