Akinwande Nano Research Group

IEEE Spectrum wrote an article on our work on continuous blood pressure monitoring (CBPM) wearable smart band. This work, in collaboration with Prof. Yaoyao Jia, was presented at the IEEE International Solid State Circuits Conference (ISSCC) 2026 and led by graduate students Yiming Han and Neelot Kumar.

Our work on the discovery of nonvolatile resistance switching in atomic monolayers of 2D materials (e.g. hBN, MoS2 and related TMDs) has been granted. Atomristors are essentially memristor or memory effect in atomically-thin materials. The link below provides details.

Neelot wins TxHealth catalyst award to further translational research in wearable blood pressure watch platform. Neelot wins TxHealth catalyst award to further translational research in wearable blood pressure watch platform.

Sivasakthya (Siva) Mohan has received the Student Leader Award from the Cockrell School of Engineering. A major honor. Congrats Siva!! The official citation is “Every year, Engineering Student Life presents student leader awards to undergraduate and graduate students to recognize … Continue reading →

Wall street journal interviewed Professor Akinwande and featured his research and a picture with research scholar Dr. Kireev in an article on 2D materials. Also ACM Magazine quoted Prof. Akinwande in an article on Chip scaling and 2D materials. https://www.wsj.com/articles/graphene-and-beyond-the-wonder-materials-that-could-replace-silicon-in-future-tech-11616817603

In original discovery research reported in nature nanotechnology, we discover the underlying physics (metal bonding to atomic vacancy) behind atomristor or memristor effect in atomic sheets using MoS2 as a model. This is arguably the smallest atomic memory unit (1nm … Continue reading →

New research demonstrating lithium-ion glass as a high performance substrate for studying 2D electronic materials for transistors and amplifiers. Congrats Md. Hasibul Alam. We are grateful to collaborators including Professors Sanjay Banerjee, and Helena Braga. Article is open access and … Continue reading →

A single atomically-thin layer of hexagonal boron nitride shows that thinner is better with regards to radio-frequency switching applications. This work is now published and is based on our earlier discovery of atomristors. Fruitful collaboration between UT-Austin (lead grad student, … Continue reading →

The combination of 2D materials and Silicon arguably represents the biggest application of these materials in advancing commercial semiconductor applications. As such, a review article on the progress, opportunities and challenges for graphene/2D materials integration on Silicon for heterogeneous 3D … Continue reading →