(001) β-Ga 2 O 3 growth with low residual impurity from precursor by cold-wall MOCVD

Abstract We investigated the growth rates and impurity concentrations from the Ga precursor in (001) β-Ga 2 O 3 homoepitaxial growth by cold-wall MOCVD. A growth rate above 0.8 μm/h was achieved with a triethylgallium (TEGa) flow rate of 9.9 μmol min⁻¹, corresponding to a Ga incorporation efficiency of 1.5×10 3 μm mol -1 . The carbon and hydrogen concentrations were below 2×10 17 cm -3 under an optimized growth temperature and VI/III ratio. The surface morphology exhibited striped features parallel to the [010] direction with a root-mean-square roughness below 1 nm. These results indicate that TEGa is an excellent precursor for achieving high-quality growth of (001) β-Ga 2 O 3 .