A synthetic method for preparing double channelling materials, and an operational mechanism for selective p- and n-type channels for gas sensing

Abstract A new synthetic strategy and associated mechanism have been developed, in which two carrier conduction channels of n- and p-type semiconductors on the surface of one material are automatically and advantageously selected during surface reactivity. The key step is to uniformly channel non-equilibrium metal oxides of CuO x and SnO x throughout the sample by applying a flame chemical vapour deposition technique for 5 s. Unlike the original SnO 2 semiconductor and Cu metal, the resulting ma