High-Performance Terahertz Photodetectors Based on Spiral Structure-Regulated Graphene
Lei Yang·Xiaoshuang Chen·Yingdong Wei·Zhiyuan Zhou·Huichuan Fan·Xiaoyun Wang·Hongfei Wu·Zhaowen Bao·Lin Wang·Bohan Zhang
Terahertz technology has demonstrated immense potential across a wide range of applications, particularly in the realm of THz photodetection. However, state-of-the-art detectors typically face fundamental trade-offs among sensitivity, response speed, operating temperature, and spectral bandwidth. While previous studies have shown that graphene field-effect transistors (GFETs) exhibit a broadband, room-temperature photoresponse to THz radiation—often attributed to photothermoelectric (PTE) and pl
