Metallic amorphous chalcogenide contact for a MoS 2 channel with a quasi-van der Waals gap

Abstract The high contact resistivity at metal/semiconductor interfaces in transition metal dichalcogenides (TMDCs), particularly MoS 2 , severely limits device performance and remains an urgent challenge. Recently, semimetal contacts have been reported to reduce contact resistivity, however, they suffer from poor thermal stability. Here, we propose metallic amorphous chalcogenide (MAC) as a solution and demonstrate amorphous TiS 2 (a-TiS 2 ) as a promising electrode material. Molecular dynamics