MMaterials Science and Engineering B4/10/2026Theoretical investigations on the confinement properties of InAlN/AlN/GaN heterostructures with InGaN/GaN multi-quantum wells back-barrierXuehua Liu·Meilan Hao·Q. M. Zhang·Honglu Cong·Yu BaiRead at Materials Science and Engineering BTagsGaN-based semiconductor devices and materialsCondensed Matter Physics
