Quantum Sensing of Opaque Materials with Plasmonically Enhanced Hexagonal Boron Nitride Spin Defects
Saakshi Dikshit·Tongcang Li·Troy K. Tsubota·Xingyu Gao·Peng Ju·Zhiyan Xie·Kunhong Shen·Naveed Hussain·Shougo Higashi·Debasish Banerjee·Songtao Wu·Sumukh Vaidya
Spin defects in hexagonal boron nitride (hBN) are emerging platforms for quantum sensing. The negatively charged boron vacancy (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>V</mml:mi></mml:mrow><mml:mrow><mml:mi>B</mml:mi></mml:mrow><mml:mrow><mml:mo>-</mml:mo></mml:mrow></mml:msubsup></mml:math>) is widely studied due to its robust spin properties, but its low brightness often requires plasmonic enhancement, limiting sensing in optically opaque or scat