Analytical compact model for mobile charge density in III-nitride multiple-channel field-effect transistors

An analytical compact model is developed for the mobile charge density of multiple-channel field-effect transistors based on the III-nitride material system. Two-dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in polar heterostructures. Focusing on the active region of devices that employ a multiple quantum-well layout, the total electron and hole populations are estimated from fundamental electrostatic and quantum mechanical principle