Corrigendum: “First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface” [Jpn. J. Appl. Phys. 65 , 03SP18 (2026)]

Corrigendum: “First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface” [Jpn. J. Appl. Phys. 65, 03SP18 (2026)], Kageshima, Hiroyuki, Seo, InSung, Akiyama, Toru, Shiraishi, Kenji