Non-Destructive Testing of Temperature Uniformity of SiC MOSFETs Based on Distribution Parameters

Silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are characterized by a more uneven temperature distribution because of their decreasing chip size and increasing power density. High temperature distribution gradients may lead to transient burnout failure of the devices and have a significant impact on their long-term reliability. In this paper, we proposed an electrical measurement method for temperature inhomogeneity of SiC MOSFETs based on temperature di