An enhancement-mode GaN based p-channel heterostructure field effect transistor with Ga 2 O 3 /AlGaN hybrid barrier layer

Abstract This work presents a GaN based p-channel heterostructure field effect transistor (p-HFET) featuring an embedded Ga2O3 layer within the AlGaN barrier. Electrical simulations demonstrate that the incorporation of the Ga2O3 layer enables enhancement-mode operation, due to valence band depression at the GaN/AlGaN heterojunction under zero bias induced by its wide bandgap. However, this improvement in transfer characteristics is accompanied by a reduction in output current and an increase in