AApplied Surface Science3/26/2026The investigation of RRAM devices based on Mo/TaOx/ITO structure with ultra-low operating voltageJinshi Zhao·Liwei Zhou·Di Wang·Lin’an He·Chenming Dong·Qi Wang·Chunbo Li·Xinkai Zhu·He Liu·Yuxiang CaoRead at Applied Surface ScienceTagsAdvanced Memory and Neural ComputingElectrical and Electronic Engineering
