Theoretical and experimental study for Ge 1- x - y Si x Sn y /Ge 1- x Sn x 2DHG based MODFETs

Abstract We examined the possibility of Ge 1- x - y Si x Sn y /Ge 1- x Sn x two-dimensional hole gas (2DHG) based modulation-doped field-effect transistors (MODFETs) by theoretical and experimental methods to leverage higher electron and hole mobilities of Ge 1- x Sn x among group-IV alloy semiconductors. The quantum simulation of energy band edge structure and carrier concentration distribution revealed that quantum well and 2DHG are formed at the Ge 1- x Sn x surface. Furthermore, increasing t