Modellering en karakterisering van UT-FDSOI-componenten en hun betrouwbaarheid bij cryogene temperaturen

As CMOS technology is scaling down, Advanced UT-FDSOI devices are widely applied in CMOS nanoscale applications due to their excellent immunity to short channel effect (SCE), high mobility, and high switching current ratio. These UT-FDSOI devices co-integrated with ICs operate at cryogenic temperatures (4 K or even lower) when used for particle detection, high-performance computing, cryogenic sensors and detectors, space electronic, low power neuromorphic circuits, and quantum ICs, therefore the