Coupling atomic layer design with switching dynamics in sub-2 nanometer oxide memristors

Memristors are nonlinear dynamic devices with applications in memory and neuromorphic computing. As memristors scale down to sub-2 nanometer thickness, atomic design is crucial for controlling switching dynamics. Here, we show the design of sub-2 nanometer MgO/Ga2O3/Al2O3 memristors with a bilayer structure consisting of a switching layer and an oxygen vacancy layer using in vacuo atomic layer deposition to control the number and sequence of atomic layers. A switching layer of intrinsic aluminum