Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors

ABSTRACT Electrolyte‐gated synaptic transistors (EGSTs) have emerged as promising neuromorphic devices capable of modulating synaptic weights via ion‐mediated control. However, the correlations between ion–polymer interactions and ion‐doping retention characteristics remain poorly understood. Notably, strategies that simultaneously control ion–polymer interactions and synaptic retention via electrolyte ions as independent design variables remain underexplored. In this study, we demonstrate that