Ultrathin Hf 0.5 Zr 0.5 O 2 Films with ZrO 2 Seed Layer for Ferroelectric Tunnel Junctions in Crossbar Array
Sung Hyuk Park·Ho Won Jang·D.H Kim·Jaehyun Kim·In Hyuk Im·Hyunseong Kim·Y LEE·Seung Ju Kim·Sohyeon Park·Ji Hyun Baek·Yong Wook Kim·Hyeon Ji Lee·Jae Young Kim
Ferroelectric tunnel junctions (FTJs) are promising candidates for next-generation nonvolatile memories, offering fast switching, low-power operation, and scalability. However, achieving robust ferroelectricity and high tunneling electroresistance (TER) at nanometer-scale thickness remains challenging due to phase instability and interfacial degradation. Here, we report ultrathin FTJs based on a 2.5 nm-thick Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) ferroelectric barrier stabilized by