Gallium-related defects in p -type silicon irradiated with electrons and protons. Anisotropy of conductivity due to boron- and gallium-related defects in irradiated silicon

Hall effect and conductivity measurements over a wide temperature range of 20–300 K are carried out on gallium-doped silicon subjected to 3.5 MeV electron and 15 MeV proton irradiation at room temperature. Electrical data obtained provide convincing evidence that impurity atoms are involved in interactions with intrinsic point defects during irradiation. As a result, heavy losses of the shallow acceptors in the irradiated samples are found. Then, to shed light on the electrical properties of the