MMaterials Science in Semiconductor Processing3/30/2026Impact of electron and hole trapping on gate reliability of planar SiC MOSFETsCheng Lin Sung·Tian‐Li Wu·Shivendra Kumar Singh·Wei-Cheng Lin·Yu-Sheng Hsiao·Surya Elangovan·Yi-Kai Hsiao·Chia-Lung Hung·Hao-Chung Kuo·Chang-Ching Tu·Yu-Cheng WangRead at Materials Science in Semiconductor ProcessingTagsSilicon Carbide Semiconductor TechnologiesElectrical and Electronic Engineering
