The series-connection of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) is essential for extending the blocking voltage capability in high-power applications, yet it inevitably suffers from dynamic voltage imbalance during switching transients. Dynamic voltage imbalance originates mainly from discrepancies in device intrinsic parasitic parameters as well as in circuit parasitic parameters, including stray inductances in the power loop and parasitic capacitances