High-entropy design of transition metal oxide semiconductors with ultra-low thermal conductivity
Robert A. Robinson·Zhiqiang Mao·Francisco Marques dos Santos Vieira·Saeed S. I. Almishal·Sai Venkata Gayathri Ayyagari·Rowan R. Katzbaer·Gabriele Di Gianluca·Saugata Sarker·Pedro R. Trinidad-Pérez·John P. Barber·Simon Gelin·Seng Huat Lee·James Hodges·Raymond E. Schaak·Venkatraman Gopalan·Nasim Alem·Christina M. Rost·Vincent H. Crespi·Jon-Paul Maria·Ismaïla Dabo·Tara Karimzadeh Sabet
Metal oxides are used in a broad array of technological applications. However, only a small subset of oxide materials are semiconducting, which limits the range of chemical compositions available for engineering. Here we demonstrate a strategy for driving insulating metal oxides into a semiconducting state with ultra-low thermal conductivity (less than 1 W/m/K) by introducing configurational entropy. This change in electronic character is facilitated by cation mixing in a high-entropy phase, whi
