Two-dimensional oxide topological insulator with iron-pnictide superconductor LiFeAs structure

By using first-principles calculations, we propose that ZrSiO can be looked at as a three-dimensional (3D) oxide weak topological insulator (TI) and its single layer is a long-sought-after 2D oxide TI with a band gap up to 30 meV. Calculated phonon spectrum of the single layer ZrSiO indicates it is dynamically stable and the experimental achievements in growing oxides with atomic precision ensure that it can be readily synthesized. This will lead to novel devices based on TIs, the so-called ``to